Memory device and method having data path with multiple prefetch I/O configurations

ABSTRACT

A memory device is operable in either a high mode or a low speed mode. In either mode 32 bits of data from each of two memory arrays are prefetched into respective sets of 32 flip-flops. In the high-speed mode, the prefetched data bits are transferred in parallel to 4 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 4 data bus terminals. In the low speed mode, two sets of prefetched data bits are transferred in parallel to 8 parallel-to-serial converters, which transform the parallel data bits to a burst of 8 serial data bits and apply the burst to a respective one of 8 data bus terminals.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional of United States patent applicationNo.09/814,566, filed Mar. 21, 2001, now U.S. Pat. No. 6,515,914.

TECHNICAL FIELD

This invention relates to memory devices, and more particularly to amemory device data path and method that can operate in either ahigh-speed, narrow data bus mode or a low-speed, wide data bus mode.

BACKGROUND OF THE INVENTION

Memory devices, such as dynamic random access memories (“DRAMs”), have avariety of performance parameters. One of the most important of theseperformance parameters is the speed at which memory devices are able toread and write data. Generally, memory devices capable of reading andwriting data at a higher speed, known as high performance memorydevices, are more expensive. Conversely, memory devices that are onlycapable of accessing data at a slower rate, known as low performancememory devices, must be sold at a cheaper price. In an attempt toincrease the operating speed of memory devices, double data (“DDR”) rateDRAMs have been developed. DDR DRAMs are synchronous DRAMs that performtwo memory operations each clock cycle—one on each transition of eachclock pulse. In a typical DDR DRAM, the memory cells in two adjacentcolumns having the same column address are read each clock cycle.

Another performance parameter applicable to memory devices is the widthof the memory device's data bus. Wider data buses operating at a givenspeed have a higher bandwidth, i.e., a greater number of bits/second canbe accessed. The data bus of most memory devices, such as DRAMs,generally have a width of various powers of 2, i.e., 4, 8, 16, etc.bits.

The need to provide memory devices having different performanceparameters generally requires memory device manufacturers to design andmanufacture a wide variety of memory devices. For example, memory devicemanufacturers must design and fabricate relatively expensive memorydevices that are capable of operating at a high-speed and different,relatively inexpensive memory devices that are only capable of operatingat a relatively low-speed. Unfortunately, it is expensive to design eachmemory device and the processing needed to fabricate the memory device.The expense of designing and fabricating a variety of different memorydevices having different performance parameters is exacerbated by therapid obsolescence of memory devices as newer devices are introduced atan ever faster rate.

There is therefore a need for memory devices, such as DRAMs, that arecapable of operating as either high-speed, narrow data bus memorydevices or a low-speed, wide data bus memory devices.

SUMMARY OF THE INVENTION

Data are coupled from a memory array to data bus terminals bytransferring 2N bits of parallel data from the array in a first mode andN bits of parallel data in a second mode. The parallel data aretransferred from the array to parallel-to-serial converters using a bushaving a width of N bits. The parallel-to-serial converters convert theparallel data bits to respective bursts of serial data containing N/Mbits and apply the bursts to 2M data bus terminals in the first mode andM data bus terminals in the second mode. The data may be transferredfrom the memory array in the first operating mode by transferring firstand second sets of N data bits from the array in respective first andsecond read operations. Alternatively, 2N data bits may be transferredfrom the memory array in a single read operation. As a result, data maybe transferred to M data bus terminals at a relatively high-speed in ahigh performance mode, or to 2M data bus terminals at a relativelylow-speed in a low performance mode.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of a memory device in accordance with oneembodiment of the invention.

FIG. 2 is a block diagram of a memory array used in the memory device ofFIG. 1.

FIG. 3 is a block diagram of one of several memory array mats used inthe memory array of FIG. 2.

FIG. 4 is a block diagram of one of several memory sub-arrays used inthe memory array mat of FIG. 3.

FIG. 5 is a block diagram of a portion of a data path used in the memorydevice of FIG. 1.

FIG. 6 is a logic and block diagram of one of several parallel-to-serialconverters used in the portion of a data path shown in FIG. 5.

FIG. 7 is a block diagram of a computer system using the memory deviceof FIG. 1.

DETAILED DESCRIPTION OF THE INVENTION

A memory device in accordance with one embodiment of the invention isillustrated in FIG. 1. The memory device illustrated therein is asynchronous dynamic random access memory (“SDRAM”) 10, although theinvention can be embodied in other types of DRAMs, such as packetizedDRAMs and RAMBUS DRAMs (RDRAMS”), as well as other types of memorydevices, such as static random access memories (“SRAMs”). The SDRAM 10includes an address register 12 that receives either a row address or acolumn address on an address bus 14. The address bus 14 is generallycoupled to a memory controller (not shown in FIG. 1). Typically, a rowaddress is initially received by the address register 12 and applied toa row address multiplexer 18. The row address multiplexer 18 couples therow address to a number of components associated with either of twomemory banks 20, 22 depending upon the state of a bank address bitforming part of the row address. Associated with each of the memorybanks 20, 22 is a respective row address latch 26 which stores the rowaddress, and a row decoder 28 which applies various signals to itsrespective array 20 or 22 as a function of the stored row address. Therow address multiplexer 18 also couples row addresses to the row addresslatches 26 for the purpose of refreshing the memory cells in the arrays20, 22. The row addresses are generated for refresh purposes by arefresh counter 30, which is controlled by a refresh controller 32.

After the row address has been applied to the address register 12 andstored in one of the row address latches 26, a column address is appliedto the address register 12. The address register 12 couples the columnaddress to a column address latch 40. Depending on the operating mode ofthe SDRAM 10, the column address is either coupled through a burstcounter 42 to a column address buffer 44, or to the burst counter 42which applies a sequence of column addresses to the column addressbuffer 44 starting at the column address output by the address register12. In either case, the column address buffer 44 applies a columnaddress to a column decoder 48 which applies various signals torespective sense amplifiers and associated column circuitry 50, 52 forthe respective arrays 20, 22.

Data to be read from one of the arrays 20, 22 is coupled to the columncircuitry 50, 52 for one of the arrays 20, 22, respectively. The data isthen coupled through a read data path 54 to a data output register 56,which applies the data to a data bus 58. Data to be written to one ofthe arrays 20, 22 is coupled from the data bus 58 through a data inputregister 60 and a write data path 62 to the column circuitry 50, 52where it is transferred to one of the arrays 20, 22, respectively. Amask register 64 may be used to selectively alter the flow of data intoand out of the column circuitry 50, 52, such as by selectively maskingdata to be read from the arrays 20, 22.

The above-described operation of the SDRAM 10 is controlled by a commanddecoder 68 responsive to command signals received on a control bus 70.These high level command signals, which are typically generated by amemory controller (not shown in FIG. 1), are a clock enable signal CKE*,a clock signal CLK, a chip select signal CS*, a write enable signal WE*,a row address strobe signal RAS*, and a column address strobe signalCAS*, which the “*” designating the signal as active low. Variouscombinations of these signals are registered as respective commands,such as a read command or a write command. The command decoder 68generates a sequence of control signals responsive to the commandsignals to carry out, the function (e.g., a read or a write) designatedby each of the command signals. These command signals, and the manner inwhich they accomplish their respective functions, are conventional.Therefore, in the interest of brevity, a further explanation of thesecontrol signals will be omitted.

The read data path 54 from the column circuitry 50, 52 to the dataoutput register 56 includes one or more pairs of complimentaryinput/output (“I/O”) lines (not shown in FIG. 1) that couple data from asense amplifier (not shown) for each column in each array 20, 22,respectively. The sense amplifier in the column circuitry 50, 52 for anaddressed column receives complimentary signals from a pair ofcomplimentary digit lines. The digit lines are, in turn, coupled to apair of the complimentary I/O lines by column addressing circuitry. Eachpair of I/O lines is selectively coupled by a pair of complimentary datalines to the complimentary inputs of a DC sense amplifier (not shown)included in the read data path 54. The DC sense amplifier, in turn,outputs data to the data output register 56, which is coupled to outputor “DQ” terminals of the memory device 10. As explained in detail below,the SDRAM 10 according to one embodiment of the invention includes 16 DQterminals, 8 of which are used in the high-speed mode and 16 of whichare used in the low speed mode. Each of the DQ terminals coupled serialdata to or from the DRAM 10 in bursts of 8 bits.

One of the memory arrays 20 is illustrated in FIG. 2. The memory array20 includes 8 memory array “mats” 100 a-h divided into 4 banks, whichare labeled in FIG. 2 at B0-B3. However, it will be understood that thememory array mats 100 a-h may be arranged in a greater or lesser numberof banks, and the memory array 20 may contain a greater or lesser numberof memory array mats 100. The read data path 54FIG. 1) includes a firstI/O bus 104 having 32 pairs of complimentary I/O lines coupled to thememory array mats 100 a,b,e,f, and a second I/O bus 106 having 32 pairsof complimentary I/O lines coupled to the memory array mats 100 c,d,g,h.

One of the memory array mats 100 used in the memory array 20 accordingto one embodiment of the invention is illustrated in FIG. 3. The mat 100includes 256 sub-arrays 110 arranged in 16 columns and 16 rows. Each ofthe memory mats 100 includes 16 column lines 114, each of which, whenactivated, selects the corresponding column. The memory mat 100 alsoincludes a large number of row lines (not shown), which, when activated,selects a respective row in the sub-arrays 110. A set of 4 flip-flops120 is positioned beneath each column of the memory mat 100. When a rowline is activated, 4 bits of data are coupled from the memory mat 100from each column selected by activating a respective column line 114.The 4 bits of data for each column are coupled from the memory mat 100to a respective set of flip flops 120 through a respective digit linebus 122 that includes 4 complimentary digit lines. Thus, when 8 columnlines 114 are activated, 32 bits of data are stored in 8 sets offlip-flops corresponding to the respective activated column lines 114.

As shown in FIG. 4, each of the sub-arrays 110 includes 256k memorycells (not shown) arranged in rows and columns. When a row of the memorymat 100 is activated and a column line 114 is selected, 4 complimentarydigit lines 130 in 4 respective columns of the sub-array 110 are coupledto 4 respective flip-flops 120. The flip-flops 120, in turn, driverespective complimentary pairs of I/O lines 140. In operation, 8 columnsof each memory mat 100 are activated at a time, so that the 8 sub-arrays110 in 8 respective active columns each output 4 bits of data. Eachmemory array mat 100 thus provides 32 bits of data, which aretemporarily stored in the flip-flops 120. Since two memory array mats100 are used for each bank, each bank B0-B3 outputs 64 bits of data. Inoperation, the 4 data bits coupled from each sub-array 110 areprefetched and stored in the flip-flops 120 for subsequent coupling tothe DQ terminals (FIG. 1), as explained in greater detail below.

The data bits are transferred from the flip-flops 120 in either of twomodes, depending on whether the memory device 10 is operating in eitherthe high-speed mode or the low-speed mode. In the high-speed mode, 8bits of data stored in respective flip-flops 120 are transferredserially to a respective data bus (DQ) terminal. The manner in which theparallel data stored in the flip-flips 120 are converted to serial datawill be explained with reference to FIGS. 5 and 6. Since there are 32bits stored in respective flip-flops 120 for each memory array mat 100,the 32 bits are coupled in serial bursts of 8 bits to each of 4 data busterminals in the high-speed mode. The 32 bits stored in the flip-flops120 for the other memory array mat 100 are also coupled in serial burstsof 8 bits to each of 4 data bus terminals. As a result, in thehigh-speed mode, 64 bits are coupled in serial bursts of 8 bits to eachof 8 data bus terminals.

In the low-speed mode, the data bits stored in the flip-flops 120 arealso transferred serially to a respective data bus (DQ) terminal.However, in the low-speed mode, the data bits are transferred to 16 databus terminals. Yet circuitry (not shown) interfacing with the memorydevice 10 is adapted to receive data in bursts of 8 bits from each ofthe 16 data bus terminals. Thus, in the low-speed mode, 128 bits arerequired to couple bursts of 8 bits to each of 16 data bus terminals.Since there are 32 bits stored in each set of respective flip-flops 120for each memory array mat 100, the 64 bits stored in the flip-flops 120for both memory array mats 100 can supply only half of the requirednumber of data bits. As a result, in the low-speed mode, two sets of 64bits must be prefetched and stored in the flip-flops 120 before theprefetched data bits can be coupled to the data bus terminals. Thereason this operating mode is considered a low-speed mode is because ofthe extra time needed to prefetch and/or coupled twice as many data bitsfrom each memory array mat 100 in the low-speed mode compared to thehigh-speed mode. Therefore, to prefetch 64 bits from each memory arraymat 100, the memory device must perform 2 read operations with each datatransfer, which requires substantially more time than a single readoperation. However, the bandwidth of the memory device 10 is somewhatthe same in both modes. In the high-speed mode, twice as many memorydevices 10 are needed to provide data to the 16 data bus terminalscompared to the low speed mode, but the data is provided twice as fast.

To help maintain the operating speed of the memory device in thelow-speed mode, the memory device 10 may, instead of performing two readoperations to provide 128 bits of data, simultaneously activate all 16columns in each memory array mat 110. Thus, each memory array mat 110prefetches 64 bits (4 bits from each column) during each read operation.As a result, all 64 of the flip-flops 120 shown in FIG. 3 are needed foreach memory array mat 110 to store the 64 prefetched bits.

In operation, 4 data bits prefetched from each column and stored inrespective flip-flops 120 are coupled through a respective pair of I/Olines 140 during the first part of each read cycle, and 4 data bitsprefetched from another column and stored in respective flip-flops 120are coupled through the same pair of I/O lines 140 during,the secondpart of each read cycle. Thus, in this alternative low-speed mode, 128bits of data stored in respective flip-flops 120 for both memory arraymats 110 are coupled through 64 pairs of complimentary I/O lines foreach read operation. In contrast, in the high-speed mode describedabove, 64 bits of data stored in respective flip-flops 120 for bothmemory array mats 110 are coupled through 64 pairs of complimentary I/Olines. As a result, in the low-speed mode, twice as many data bits mustbe coupled through the data lines during the same period of time. It isfor this reason, that this operating mode is considered a low-speed modeeven though it does not require 2 read operations for every read cycle.

The manner in which prefetched data bits are coupled between theflip-flops 120 and data bus terminals for one of the memory mats 100 isshown in FIG. 5. The circuitry shown in FIG. 5 is adapted to be usedwith the first embodiment of the low-speed operating mode in which tworeads are performed for every read operation. However, it will beunderstood that the circuitry can be easily modified for the alternativeembodiment in which every column of each memory array mat 100 is readand twice as many flip-flops 120 are provided.

With reference to FIG. 5, the prefetched 32 data bits stored in therespective flip-flops 120 are coupled through 32 respectivecomplimentary pairs of I/O lines 140. Eight groups of 4 I/O line pairs140 are coupled to 8 respective parallel-to-serial converters 150 sothat 4 pairs of I/O lines 140 are coupled to each converter 150.However, 4 of the converters 150 a include only 4 pairs of input lines,which are coupled to 4 pairs of I/O lines 140 of a respective group. Theremaining 4 converters 150 b include 8 input lines, which are coupled to4 pairs of I/O lines 140 of a respective group and 4 pairs of I/O lines140 that are coupled to one of the 4-input converters 150 a.

In the low-speed mode, 4 bits of parallel data are coupled to each ofthe 16 converters 150 a,b for each read operation, so that, after tworead operations have been performed, 8 bits have been coupled to each ofthe 16 parallel-to-serial converters 150. The converters 150 then eachoutput an 8-bit burst through respective I/O paths 134 to 16 respectivedata bus terminals 160. In the high-speed mode, 8 bits of parallel dataare coupled to each of the four 8-input converters 150 b, and theconverters 150 b then each output an 8-bit burst through I/O paths 134to 8 respective data bus terminals 160. Thus, in the high-speed mode thefour 4-input converters 150 a and the data bus terminals 160 to whichthey are coupled are not used.

For a write operation, burst of 8 bits are applied to each of either 8or 16 data bus terminals, depending upon whether the SDRAM 10 isoperating in either the high-speed mode or the low-speed mode,respectively. Respective serial-to-parallel converters 168 then convertthe 8-bit burst to either an 8 bits of parallel data (in the high-speedmode) or two sets of 4 bits of parallel data (in the low-speed mode).The 4 data bits applied to each column of the memory mat are thencoupled to respective columns of each sub-array 110 in a writeoperation.

One embodiment of the 8-bit parallel-to-serial converters 150 a is shownin FIG. 6. As previously explained, the parallel-to-serial converter 150a is adapted to receive 8 bits of parallel data and output a burst of 8serial bits. However, the 4-bit parallel-to-serial converters 150 b aresubstantially identical, as explained further below. When parallel dataare to be transferred from the flip-flops 120 to the converter 150 aRinPar signal transitions high, thereby triggering a load logic circuit162. The load logic circuit 162 then outputs a high Data Load 0(“DatLoad0”) output, which is applied to a 4 input latch 164. The latch164 has a 4-bit parallel data input that is selectively coupled to 8 ofthe flip-flops 120. Thus, each data input of the parallel-to-serialconverter 150 a is coupled to the outputs of two flip-flops 120. Theoutputs of 4 of the flip-flops 120 are coupled to respective data inputterminals on the low-to-high transition of the RinPar signal. The 4 bitsof parallel data are then stored in the latch 164.

When the 4 bits of data stored in the latch 164 are to be shifted out ofthe latch, an Rin signal transitions high, thereby causing an inverter168 to output a low to a NAND gate 170, which, with NAND gate 174, formsa set-reset flip-flop 176. The flip-flop 176 is then set, therebycausing the NAND gate 170 to output an active high Serial Unload(“SerUld”) signal to the latch 164. The high SerUld signal causes thelatch 164 to output an active low Busy signal, and, in response to aSerial Clock (“SerClk”) signal shift the 4 bits of stored data out ofthe latch one bit at a time on each SerClk transition.

The serial data at the output of the latch 164 is applied to amultiplexer 180. As explained further below, the output of an inverter182 is initially low and the other input to the multiplexer 180 isinitially high. As a result, the multiplexer 180 couples a 4-bit burstof serial data from the latch 164 to a double-edge triggered flip-flop184 that is clocked by the SerClk signal and its compliment. Thus, on atransition of the SerClk signal having one polarity, each bit of data isshifted into the double-edge triggered flip-flop 184, and that bit ofdata is then shifted out of the flip-flop 184 on the next transition ofthe SerClk signal having the opposite polarity.

The high Busy signal at the output of the latch 164 causes a NAND gate190 to output a high to a clocked driver 194 that is identical to thedouble-edge triggered flip-flop 184. Thus, on each transition of theSerClk signal, the driver 194 outputs a high Tri-State (“TS”) signal.The TS signal is used to switch circuitry (not shown) receiving theserial data from the flip-flop 184 downstream in the read data path 54(FIG. 1) from a tri-state (high impedance) to an active, low impedancestate.

Prior to the end of 4 cycles of the SerCLk, a second set of 4 flip-flops120 are coupled to respective Data<0:3> terminals and the Rin signaltransitions low. The high-to-low transition of the Rin signal causes theload logic circuit 162 to output a high Data Load 1 (“DatLoad1”) output,thereby causing a second 4-input latch 200 to store the 4 bits ofparallel data from the flip-flops 120.

When the 4 bits of data stored in the latch 164 have been shifted outresponsive to 2 periods of the SClk signal, the latch 164 outputs a lowDoneSync signal. The low DoneSync signal is applied to the NAND gate 174to reset the flip-flop 176, thereby causing the NAND gate 170 to disablethe latch 164 from further outputting further serial data. The lowDoneSync signal is also applied to a Done0 input of the load logiccircuit 162 to subsequently allow the counter to be reset, as explainedfurther below. Finally, the Done0 signal is applied to a NAND gate 204that, with a NAND gate 206, forms a flip-flop 208 that is set by theDone0 signal. When the flip-flop 208 is set, it causes the NAND gate 206to output a high, which causes an inverter 210 to apply an active highsignal to a Serial Unload (“SerUld”) terminal of the latch 200. Thelatch 200 then applies the 4 stored bits to the multiplexer 180responsive to the SerClk signal, as explained above for the latch 164.The active high signal applied to the SerUld terminal of the latch 200also causes the latch 164 to apply an active low Busy signal to the NANDgate 190. The NAND gate 190 then applies a high to the driver 194 tocause the NAND gate 190 to output a high TS signal, as previouslyexplained.

Setting the flip-flop 208 also causes the NAND gate 204 to output a low,which causes an inverter 214 to apply a high to the inverter 182 and themultiplexer 180. The multiplexer 180 then couples the output of thelatch 200 to the double-edge triggered flip-flop 184.

When the 4 bits of data stored in the latch 200 have been shifted out ofthe latch 200, the latch 200 outputs a low DoneSync signal. The lowDoneSync signal is applied to the NAND gate 200 to reset the flip-flop208, thereby disabling the latch 200 from further outputting serialdata. The low DoneSync signal is also applied to a Done1 input of theload logic circuit 162 to reset the load logic circuit 162 inpreparation for a subsequent transition of the RinPar signal.

The flip-flops 176, 208 and the load logic circuit 162 can also be resetby an active low Reset signal, which is typically generated uponpower-up.

As previously mentioned, the parallel-to-serial converter 150 a converts2 loads of 4 parallel bits of data to a burst of 8 serial bits of data.The parallel-to-serial converter 150 a can easily be modified toimplement the converter 150 b that converts 4 either 4 or 8 parallelbits of data to a burst of 8 serial bits of data. For example, theconverter 150 b can be implemented by simply adding a set of 4 latches(not shown) to latch the parallel load of 8 bits. These latches aredisabled when in the 4-bit mode and the converter 150 b operates in thesame manner as the converter 150 a as described above.

FIG. 7 shows a computer system 300 containing the SDRAM 10 of FIG. 1.The computer system 300 includes a processor 302 for performing variouscomputing functions, such as executing specific software to performspecific calculations or tasks. The processor 302 includes a processorbus 304 that normally includes an address bus, a control bus, and a databus. In addition, the computer system 300 includes one or more inputdevices 314, such as a keyboard or a mouse, coupled to the processor 302to allow an operator to interface with the computer system 300.Typically, the computer system 300 also includes one or more outputdevices 316 coupled to the processor 302, such output devices typicallybeing a printer or a video terminal. One or more data storage devices318 are also typically coupled to the processor 302 to allow theprocessor 302 to store data in or retrieve data from internal orexternal storage media (not shown). Examples of typical storage devices318 include hard and floppy disks, tape cassettes, and compact diskread-only memories (CD-ROMs). The processor 302 is also typicallycoupled to cache memory 326, which is usually static random accessmemory (“SRAM”), and to the SDRAM 10 through a memory controller 330.The memory controller 330 normally includes a control bus 336 and anaddress bus 338 that are coupled to the SDRAM 10. A data bus 340 iscoupled from the SDRAM 10 to the processor bus 304 either directly (asshown), through the memory controller 330, or by some other means.

From the foregoing it will be appreciated that, although specificembodiments of the invention have been described herein for purposes ofillustration, various modifications may be made without deviating fromthe spirit and scope of the invention. For example, although the SDRAM10 has 16 data bus terminals, 16 DQ terminals, 8 of which are used inthe high-speed mode and 16 of which are used in the low speed mode, itwill be understood that memory devices may have a lesser or greaternumber of DQ terminals. Also, each burst of data may contain a lesser orgreater number of bits than the 8-bit bursts described herein, and thewidth of the I/O path coupling data between the memory array and theparallel-to-serial converters may be wider or narrower than the I/O pathdescribed herein. Other variations will also be apparent to one skilledin the art. Accordingly, the invention is not limited except as by theappended claims.

What is claimed:
 1. A method of transferring data from a memory array ineither a first operating mode or a second operating mode, the methodcomprising: prefetching a first set of 2N data bits in the firstoperating mode; prefetching a second set of N data bits in the secondoperating mode; in the first operating mode, transferring the first setof 2N data bits to 2M data bus terminals in respective bursts of N/Mbits; and in the second operating mode, transferring the second set ofdata bits to M data bus terminals in M busts of N/M bits.
 2. The methodof claim 1, wherein the act of prefetching a first set of 2N data bitscomprises: prefetching N data bits from the memory array in a first readoperation; and prefetching N data bits from the memory array in a secondread operation.
 3. The method of claim 1, wherein the act of prefetchinga first set of 2N data bits comprises prefetching 2N data bits from thememory array in a single read operation.
 4. The method of claim 1,wherein the act of transferring the first set of data bits to 2M databus terminals in respective bursts of N/M bits in the first operatingmode comprises: transferring a first set of N parallel data bits;transferring a second set of N parallel data bits; converting the 2Ntransferred data bits to 2M bursts each containing N/M bits; andcoupling each of the 2M bursts to are respective data bus terminal. 5.The method of claim 1, wherein N is equal to 32 and M is equal to
 4. 6.The method of claim 1, wherein the act of transferring the first set ofdata bits to 2M data bus terminals in respective bursts of N/M bits inthe first operating mode comprises: transferring each data bit in thefirst set of N parallel data bits from the memory array to respectivefirst storage devices; transferring each data bit in the second set of Nparallel data bits from the memory array to respective second storagedevices; transferring the N data bits in the first storage devices to 2Mparallel-to-serial converters; transferring the N data bits in thesecond storage devices to the 2M parallel-to-serial converters; usingthe 2M parallel-to-serial converters to convert the 2N transferred databits to 2M bursts of serial data each containing N/M bits; and applyingthe 2M bursts to respective data bus terminals.